Author Affiliations
Abstract
College of Science, Zhejiang University of Science and Technology, Hangzhou 310023
A novel InGaAs/InAlAs coupled quantum well structure is proposed for large field-induced refractive index change with low absorption loss. In the case of low applied electric field of 15 kV/cm and low absorption loss ('alpha' <= 100 cm^(-1)), a large field-induced refractive index change (for transverse electric (TE) mode, 'Delta' n = 0.012; for transverse magnetic (TM) mode, 'Delta' n = 0.0126) is obtained in the structure at the operation wavelength of 1.55 um. The value is larger by over one order of magnitude than that in a rectangular quantum well. The result is very attractive for semiconductor optical switching devices.
230.0230 Optical devices 160.6000 Semiconductors, including MQW 190.5970 Semiconductor nonlinear optics including MQW 160.4760 Optical properties Chinese Optics Letters
2006, 4(6): 351
Author Affiliations
Abstract
1 Department of Information Science &
2 Electronic Engineering, Zhejiang University, Hangzhou 310027
A novel coupled quantum well structure --- quasi-symmetric coupled quantum well (QSCQW) is proposed. In the case of low applied electric field (F = 25 kV/cm) and low absorption loss (α ~ 100 cm^(-1)), a large field-induced refractive index change (for TE mode, Δn = 0.0106; for TM mode, Δn = 0.0115) is obtained in QSCQW structure at operating wavelength λ = 1550 nm. The value is larger by over one to two order of magnitude compared to that in a rectangular quantum well (RQW) and about 50% larger than that of five-step asymmetric coupled quantum well (FACQW) structure under the above work conditions.
160.6000 semiconductors including MQW in materials 190.5970 semiconductor nonlinear optics including MQW in nonlinear optics 160.4760 optical properties Chinese Optics Letters
2005, 3(9): 09533
